Cascadable in-memory computing based on symmetric writing and readout.

ABSTRACT: The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and readout operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a previously unimplemented symmetric write and readout mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe₃GeTe₂ and WTe₂. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved using unconventional charge-to-z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin-to-c

SUBMITTER: Wang L 

PROVIDER: S-EPMC11324065 | biostudies-literature | 2022 Dec

REPOSITORIES: biostudies-literature