Stable Oxygen Incorporation in Superconducting TaN: An Experimental and Theoretical Assessment.

ABSTRACT: Oxide formation in superconducting TaN thin films is analyzed through experimental measurements and computational simulations. TaN was synthesized in an ultrahigh vacuum (UHV) system by reactive pulsed laser deposition and characterized in situ by X-ray photoelectron spectroscopy; it was also characterized ex situ by X-ray diffraction, transmission electron microscopy, and the four-point probe method. Despite being grown in an UHV chamber with a base pressure of 5 × 10-9 Torr, TaN contains a significant amount of oxygen (up to 20 at. %) attributed to residual gases containing O atoms. Several TaN1-x O x models, with different amounts of O atoms incorporated into N sites, were simulated using ab initio calculations to assess the feasibility of oxide formation. Thermodynamic stability analys

SUBMITTER: Quintanar-Zamora V 

PROVIDER: S-EPMC11325398 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature