Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO₂ Ferroelectric Films.

ABSTRACT: Epitaxial strain plays an important role in the stabilization of ferroelectricity in doped hafnia thin films, which are emerging candidates for Si-compatible nanoscale devices. Here, we report on epitaxial ferroelectric thin films of doped HfO₂ deposited on La_0.7Sr_0.3MnO₃-buffered SrTiO₃ substrates, La_0.7Sr_0.3MnO₃ SrTiO₃-buffered Si (100) wafers, and trigonal Al₂O₃ substrates. The investigated films appear to consist of four domains in a rhombohedral phase for films deposited on La_0.7Sr_0.3MnO₃-buffered SrTiO₃ substrates and two domains for those deposited on sapphire. These findings are supported by extensive transmission elect

SUBMITTER: Petraru A 

PROVIDER: S-EPMC11331437 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature