Single-crystalline metal-oxide dielectrics for top-gate 2D transistors.

ABSTRACT: Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors^1-4. However, owing to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties^3,5,6. Here we demonstrate the fabrication of atomically thin single-crystalline Al₂O₃ (c-Al₂O₃) as a high-quality top-gate dielectric in 2D FETs. By using intercalative oxidation techniques, a stable, stoichiometric and atomically thin c-Al₂O₃ layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface at

SUBMITTER: Zeng D 

PROVIDER: S-EPMC11338823 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature