Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties.

ABSTRACT: We report on hybrid memristor devices consisting of germanium dioxide nanoparticles (GeO₂ NP) embedded within a poly(methyl methacrylate) (PMMA) thin film. Besides exhibiting forming-free resistive switching and an uncommon "ON" state in pristine conditions, the hybrid (nanocomposite) devices demonstrate a unique form of mixed-mode switching. The observed stopping voltage-dependent switching enables state-of-the-art bifunctional synaptic behavior with short-term (volatile/temporal) and long-term (nonvolatile/nontemporal) modes that are switchable depending on the stopping voltage applied. The short-term memory mode device is demonstrated to further emulate important synaptic functions such as short-term potentiation (STP), short-term depression (STD), paired-pulse facilitation (

SUBMITTER: Jaafar AH 

PROVIDER: S-EPMC11345731 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature