Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices.

ABSTRACT: The growth kinetics of vertical III-V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidewalls to the top sustains a superlinear growth regime. In this work, we report on the growth of different GaAs nanostructures by selective area MOVPE on GaAs (111)B substrates. We show that the opening dimensions and geometry qualitatively alter the morphology and height evolution of the structures. We compare the time evolution of vertical GaAs NWs stemming from circular holes and horizontal GaAs nanomembranes (NMs) growing from one-dimensional (1D) rectangular slits on the same substrate. While NW heights grow exponentially with time, NM

SUBMITTER: Zendrini M 

PROVIDER: S-EPMC11348316 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature