Influence of High-κ Dielectrics Integration on ALD-Based MoS₂ Field-Effect Transistor Performance.

ABSTRACT: The integration of high-κ dielectrics on MoS₂ field-effect transistors (FETs) is essential for the realization of MoS₂ in ultrascaled nanoelectronic devices and circuits. Most studies covering this topic are based on exfoliated MoS₂ flakes or chemical vapor deposition (CVD) grown MoS₂ films, whereas other techniques, such as atomic layer deposition (ALD), are also gaining attention for the growth of MoS₂ in recent years. In this work, we grow large-area MoS₂ by means of plasma-enhanced (PE-)ALD and evaluate the influence of high-κ dielectrics on the properties of ALD-based MoS₂ FETs through electrical characterization combined with surface-chemical and high-resolution scanning transmission electron microscopy (HR-

SUBMITTER: Mahlouji R 

PROVIDER: S-EPMC11348321 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature