High Electron Mobility in Si-Doped Two-Dimensional β-Ga₂O₃ Tuned Using Biaxial Strain.

ABSTRACT: Two-dimensional (2D) semiconductors have attracted much attention regarding their use in flexible electronic and optoelectronic devices, but the inherent poor electron mobility in conventional 2D materials severely restricts their applications. Using first-principles calculations in conjunction with Boltzmann transport theory, we systematically investigated the Si-doped 2D β-Ga₂O₃ structure mediated by biaxial strain, where the structural stabilities were determined by formation energy, phonon spectrum, and ab initio molecular dynamic simulation. Initially, the band gap values of Si-doped 2D β-Ga₂O₃ increased slightly, followed by a rapid decrease from 2.46 eV to 1.38 eV accompanied by strain modulations from -8% compressive to +8% tensile, which

SUBMITTER: Zeng H 

PROVIDER: S-EPMC11356731 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature