Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In₂Se₃ on fluor-phlogopite.

ABSTRACT: Epitaxial growth of two-dimensional (2D) materials with uniform orientation has been previously realized by introducing a small binding energy difference between the two locally most stable orientations. However, this small energy difference can be easily disturbed by uncontrollable dynamics during the growth process, limiting its practical applications. Herein, we propose a quasi-equilibrium growth (QEG) strategy to synthesize inch-scale monolayer α-In₂Se₃ single crystals, a semiconductor with ferroelectric properties, on fluor-phlogopite substrates. The QEG facilitates the discrimination of small differences in binding energy between the two locally most stable orientations, realizing robust single-orientation epitaxy within a broad growth window. Thus, single-cryst

SUBMITTER: Si K 

PROVIDER: S-EPMC11362549 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature