Approaching the Intrinsic Limits of Short Channel Vertical Organic Electrochemical Transistors.

ABSTRACT: Vertical architectures for organic electrochemical transistors (OECTs), due to their submicrometer channel lengths, have presented themselves as a straightforward design approach for achieving high g_m/τ ratios, a figure of merit that assesses the performance of the devices by virtue of their transconductance (g_m = dI_D/dV_GS) and switching time constant (τ). However, as the practical limitations of the geometries are overcome, the influence of parasitic phenomena becomes more dominant and limits the performance of the device. One approach to reduce the detrimental effects of parasitic resistance in the drain-source circuit is to use a four-point sourcing technique. Here, vertical OECTs are fabricated with four-point stru

SUBMITTER: Galeana Perez Negron A 

PROVIDER: S-EPMC11367573 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature