Atomic and Electronic Structure of Defects in hBN: Enhancing Single-Defect Functionalities.

ABSTRACT: Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their midgap electronic structure and orbital/spin wave function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information ab

SUBMITTER: Qiu Z 

PROVIDER: S-EPMC11375783 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature