Gate Modulation of Dissipationless Nonlinear Quantum Geometric Current in 2D Te.

ABSTRACT: Two-dimensional trigonal tellurium (2D Te), a narrow-bandgap semiconductor with a bandgap of approximately 0.3 eV, hosts Weyl points near the band edge and exhibits a narrow, strong Berry curvature dipole (BCD). By applying a back-gate bias to align the Fermi level with the BCD, a sharp increase in the dissipationless transverse nonlinear Hall response is observed in 2D Te. Gate modulation of the BCD demonstrates an on/off ratio of 10⁴ and a responsivity of nearly 10⁶ V/W, while the longitudinal current induced by band modulation reaches an on/off ratio of about 10. This current is sustained up to 200 K, exhibiting a change of 3 orders of magnitude. The inclusion of both transistor action and rectification enhances the temperature sensitivity of the dissipationless Ha

SUBMITTER: Kim G 

PROVIDER: S-EPMC11378762 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature