Novel halogenated cyclopentadienyl hafnium precursor for atomic layer deposition of high-performance HfO₂ thin film.

ABSTRACT: High dielectric constant (high-k) materials play a crucial role in modern electronics, particularly in semiconductor applications such as transistor gate insulators and dielectrics in metal-insulator-metal (MIM) capacitors. However, achieving optimal crystallinity and suppressing interfacial layer formation during deposition processes remain key challenges. To address these challenges, this study introduces a novel approach using atomic layer deposition (ALD) with a new Hf precursor incorporating an iodo ligand. The synthesized precursor, IHf, demonstrates enhanced thermal stability and reactivity, leading to superior film properties. ALD deposition of HfO₂ thin films using IHf yields excellent crystallinity and effectively inhibits interfacial layer formation, resulting

SUBMITTER: Park S 

PROVIDER: S-EPMC11385255 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature