Multinuclear Tin-Based Macrocyclic Organometallic Resist for EUV Photolithography.

ABSTRACT: We report a new photoresist based on a multinuclear tin-based macrocyclic complex and its performance for extreme UV (EUV) photolithography. The new photoresist has a trinuclear macrocyclic structure containing three salicylhydroxamic acid ligands and six Sn-CH₃ bonds, which was confirmed by multinuclear nuclear magnetic resonance (NMR) and FT-IR spectroscopies and single-crystal X-ray diffraction study. The resist exhibited good humidity, air, and thermal stabilities, while showing good photochemical reactivity. Photochemical cross-linking of the resist was confirmed by X-ray photoelectron and solid-state NMR spectroscopic analyses. EUV photolithography with the 44 nm-thick film on a silicon wafer revealed a line-edge-roughness (LER) of 1.1 nm in a 20 nm half-pitch pattern. The

SUBMITTER: Lim G 

PROVIDER: S-EPMC11393934 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature