High-Quality Single Crystalline Sc_0.37Al_0.63N Thin Films Enabled by Precise Tuning of III/N Atomic Flux Ratio during Molecular Beam Epitaxy.

ABSTRACT: We attained wurtzite Sc_xAl_1-xN (0.16 ≤ x ≤ 0.37) thin films by varying the Sc and Al fluxes at a fixed active nitrogen flux during plasma-assisted molecular beam epitaxy. Atomic fluxes of Sc and Al sources via measured Sc percentage in as-grown Sc_xAl_1-xN thin films were derived as the feedback for precise determination of the Sc_xAl_1-xN growth diagram. We identified an optimal III/N atomic flux ratio of 0.78 for smooth Sc_0.18Al_0.82N thin films. Further increasing the III/N ratio led to phase separation under N-rich conditions, validated by the observation of high-Sc-content hillocks with energy-dispersive X-ray spectroscopy mapping. At the fixed III/N rati

SUBMITTER: Yin Y 

PROVIDER: S-EPMC11396886 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature