Contact Resistance Engineering in WS₂-Based FET with MoS₂ Under-Contact Interlayer: A Statistical Approach.

ABSTRACT: One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using

SUBMITTER: Giza M 

PROVIDER: S-EPMC11403553 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature