Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition.

ABSTRACT: Co-doping of phosphorus and boron elements into crystalline silicon quantum dot (c-Si QD) is an effective approach for enhancing the photoluminescence (PL) performance. In this paper, we report on the preparation of hydrogenated silicon nitride (SiN_x:H) thin films embedded with phosphorus-boron co-doped c-Si QDs via plasma enhanced chemical vapor deposition route. Mixed dilution including hydrogen (H₂) and argon (Ar) is applied in the in-situ deposition process for optimizing the deposition process. The P-B co-doped c-Si QD/SiN_x:H thin films exhibit a wide range of PL spectra. The emission is greatly improved especially for the short-wavelength light when compared to the SiO_x:H thin film containing P-B co-doped c-Si QDs. The effects of H₂

SUBMITTER: Gu Z 

PROVIDER: S-EPMC11405671 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature