Improved oxidation behavior of Hf_0.11Al_0.20B_0.69 in comparison to Hf_0.28B_0.72 magnetron sputtered thin films.

ABSTRACT: The oxidation resistance of Hf_0.28B_0.72 and Hf_0.11Al_0.20B_0.69 thin films was investigated comparatively at 700 °C for up to 8 h. Single-phase solid solution thin films were co-sputtered from HfB₂ and AlB₂ compound targets. After oxidation at 700 °C for 8 h an oxide scale thickness of 31  ±  2 nm was formed on Hf_0.11Al_0.20B_0.69 which corresponds to 14% of the scale thickness measured on Hf_0.28B_0.72. The improved oxidation resistance can be rationalized based on the chemical composition and the morphology of the formed oxide scales. On Hf_0.28B_0.72 the formation of a porous, O, Hf, and B-containing scale and the formation of crystalline HfO<

SUBMITTER: Kummerl P 

PROVIDER: S-EPMC11408622 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature