Wafer-level heterogeneous integration of electrochemical devices and semiconductors for a monolithic chip.

ABSTRACT: Micro-scale electrochemical devices, despite their wide applications and unique potential to achieve 'More than Moore's law', face significant limitations in constructing functional chips due to their inability to integrate with semiconductors. In this study, we propose an electrochemical gating effect and material work function matching criteria, and thus establish the first heterogeneous integration theory for electrochemical devices and semiconductors. Accordingly, we create a novel 3D integration architecture and CMOS-compatible fabrication methodology, including optimizing individual devices, electron/ionic isolation, interconnection, and encapsulation. As a demonstration, we integrate electrochemical micro supercapacitors with a P-N junction diode rectifier bridge circuit and success

SUBMITTER: Xu S 

PROVIDER: S-EPMC11409884 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature