Mechanism of local electric oxidation on two-dimensional MoS₂ for resistive memory application.

ABSTRACT: The manipulation and mechanism of two-dimensional (2D) transition metal dichalcogenides (TMDs) by external electric field are significant to the photoelectric properties. Herein, the 2D MoS₂ nanosheets were oxidized to form MoS₂-MoO₃ local heterojunctions by an electric field, applied in multistable memristors for the proposal of NanoQR code. A modified thermal oxidation model was derived to reveal the mechanism of local electric oxidation on 2D MoS₂. From current-voltage curves, the barrier height of the MoS₂ device showed an increase of 0.39 eV due to local oxidation after applying voltage for 480 s. Based on density-functional theory, the increase of barrier height was calculated as 0.38 eV between MoS₂-MoS₂ an

SUBMITTER: Dong H 

PROVIDER: S-EPMC11417336 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature