Structural and Electronic Response of Multigap N-Doped In₂Se₃: A Prototypical Material for Broad Spectral Optical Devices.

ABSTRACT: The production of controlled doping in two-dimensional semiconductor materials is a challenging issue when introducing these systems into current and future technology. In some compounds, the coexistence of distinct crystallographic phases for a fixed composition introduces an additional degree of complexity for synthesis, chemical stability, and potential applications. In this work, we demonstrate that a multiphase In₂Se₃ layered semiconductor system, synthesized with three distinct structures─rhombohedral α and β-In₂Se₃ and trigonal δ-In₂Se₃─exhibits chemical stability and well-behaved n-type doping. Scanning tunneling spectroscopy measurements reveal variations in the local electronic density of states among the In_2<

SUBMITTER: Rodrigues-Fontenele G 

PROVIDER: S-EPMC11420874 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature