Large-Area Growth of High-Optical-Quality MoSe₂/hBN Heterostructures with Tunable Charge Carrier Concentration.

ABSTRACT: Van der Waals heterostructures open up vast possibilities for applications in optoelectronics, especially since it was recognized that the optical properties of transition-metal dichalcogenides (TMDC) can be enhanced by adjacent hBN layers. However, although many micrometer-sized structures have been fabricated, the bottleneck for applications remains the lack of large-area structures with electrically tunable photoluminescence emission. In this study, we demonstrate the electrical charge carrier tuning for large-area epitaxial MoSe₂ grown directly on epitaxial hBN. The structure is produced in a multistep procedure involving Metalorganic Vapor Phase Epitaxy (MOVPE) growth of large-area hBN, a wet transfer of hBN onto a SiO₂/Si substrate, and the subsequent Molecular

SUBMITTER: Ludwiczak K 

PROVIDER: S-EPMC11420876 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature