Atomic Nb-doping of WS₂ for high-performance synaptic transistors in neuromorphic computing.

ABSTRACT: Owing to the controllable growth and large-area synthesis for high-density integration, interest in employing atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDCs) for synaptic transistors is increasing. In particular, substitutional doping of 2D materials allows flexible modulation of material physical properties, facilitating precise control in defect engineering for eventual synaptic plasticity. In this study, to increase the switch ratio of synaptic transistors, we selectively performed experiments on WS₂ and introduced niobium (Nb) atoms to serve as the channel material. The Nb atoms were substitutionally doped at the W sites, forming a uniform distribution across the entire flakes. The synaptic transistor devices exhibited an improved switch ratio o

SUBMITTER: Guan K 

PROVIDER: S-EPMC11427458 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature