Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC high-temperature pressure sensors.

ABSTRACT: Due to the excellent mechanical, chemical, and electrical properties of third-generation semiconductor silicon carbide (SiC), pressure sensors utilizing this material might be able to operate in extreme environments with temperatures exceeding 300 °C. However, the significant output drift at elevated temperatures challenges the precision and stability of measurements. Real-time in situ temperature monitoring of the pressure sensor chip is highly important for the accurate compensation of the pressure sensor. In this study, we fabricate platinum (Pt) thin-film resistance temperature detectors (RTDs) on a SiC substrate by incorporating aluminum oxide (Al₂O₃) as the transition layer and utilizing aluminum nitride (AlN) grooves for alignment through microfabrication techn

SUBMITTER: Fang Z 

PROVIDER: S-EPMC11427678 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature