Oxygen-Plasma-Treated Al/TaO_X/Al Resistive Memory for Enhanced Synaptic Characteristics.

ABSTRACT: In this study, we investigate the impact of O₂ plasma treatment on the performance of Al/TaO_X/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O₂-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O₂-plasma-treated RRAM cells exhibited significant improvements over untreated RRAM cells, including higher on/off ratios, improved uniformity and distribution, longer retention times, and enhanced durability. The conduction mechanism is investigated by current-voltage (I-V) curve fitting. In addition, paired-pulse faci

SUBMITTER: Kim G 

PROVIDER: S-EPMC11430571 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature