Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode.
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ABSTRACT: The impact of wet treatment using an (NH4)2S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet cleaning resulted in reduced surface roughness and contact resistivity. The lowest specific contact resistance (ρc < 1 × 10-4 Ω·cm2) was achieved with samples treated with an (NH4)2S-isopropanol solution, whereas the highest resistivity (ρc = 3.3 × 10-4 Ω·cm2) and surface roughness (Ra = 16 nm) were observed in samples prepared by standard methods. Annealing the contact system in an N2 + O2 + H2O atmosphere caused degradation through species i
SUBMITTER: Levchenko I
PROVIDER: S-EPMC11433334 | biostudies-literature | 2024 Sep
REPOSITORIES: biostudies-literature
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