Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low-Power Memory.

ABSTRACT: Resistive switching memories have garnered significant attention due to their high-density integration and rapid in-memory computing beyond von Neumann's architecture. However, significant challenges are posed in practical applications with respect to their manufacturing process complexity, a leakage current of high resistance state (HRS), and the sneak-path current problem that limits their scalability. Here, a mild-temperature thermal oxidation technique for the fabrication of low-power and ultra-steep memristor based on Ag/TiO_x/SnO_x/SnSe₂/Au architecture is developed. Benefiting from a self-assembled oxidation layer and the formation/rupture of oxygen vacancy conductive filaments, the device exhibits an exceptional threshold switching behavior with high

SUBMITTER: Pan Z 

PROVIDER: S-EPMC11434030 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature