Flexoelectricity Modulated Electron Transport of 2D Indium Oxide.

ABSTRACT: The phenomenon of flexoelectricity, wherein mechanical deformation induces alterations in the electron configuration of metal oxides, has emerged as a promising avenue for regulating electron transport. Leveraging this mechanism, stress sensing can be optimized through precise modulation of electron transport. In this study, the electron transport in 2D ultra-smooth In₂O₃ crystals is modulated via flexoelectricity. By subjecting cubic In₂O₃ (c-In₂O₃) crystals to significant strain gradients using an atomic force microscope (AFM) tip, the crystal symmetry is broken, resulting in the separation of positive and negative charge centers. Upon applying nano-scale stress up to 100 nN, the output voltage and power values reach their

SUBMITTER: Hu X 

PROVIDER: S-EPMC11434226 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature