Physical Properties of an Efficient MAPbBr₃/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors.

ABSTRACT: Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr₃) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations. The MAPbBr₃/GaAs heterojunction photodetector exhibited wide spectral responsivity, from 540 to 900 nm. The fabrication steps of the prototype device, including a new preparation recipe

SUBMITTER: Hidouri T 

PROVIDER: S-EPMC11434396 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature