Photovoltage-Driven Photoconductor Based on Horizontal p-n-p Junction.

ABSTRACT: The photoconductive gain theory demonstrates that the photoconductive gain is related to the ratio of carrier lifetime to carrier transit time. Theoretically, to achieve higher gain, one can either prolong the carrier lifetime or select materials with high mobility to shorten the transit time. However, the former slows the response speed of the device, while the latter increases the dark current and degrades device sensitivity. To address this challenge, a horizontal p-n-p junction-based photoconductor is proposed in this work. This device utilizes the n-region as the charge transport channel, with the charge transport direction perpendicular to the p-n-p junction. This design offers two advantages: (i) the channel is depleted by the space charge l

SUBMITTER: Han F 

PROVIDER: S-EPMC11435119 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature