Edge-Passivated Monolayer WSe₂ Nanoribbon Transistors.

ABSTRACT: The ongoing reduction in transistor sizes drives advancements in information technology. However, as transistors shrink to the nanometer scale, surface and edge states begin to constrain their performance. 2D semiconductors like transition metal dichalcogenides (TMDs) have dangling-bond-free surfaces, hence achieving minimal surface states. Nonetheless, edge state disorder still limits the performance of width-scaled 2D transistors. This work demonstrates a facile edge passivation method to enhance the electrical properties of monolayer WSe₂ nanoribbons, by combining scanning transmission electron microscopy, optical spectroscopy, and field-effect transistor (FET) transport measurements. Monolayer WSe₂ nanoribbons are passivated with amorphous WO_xSe_y</

SUBMITTER: Chen S 

PROVIDER: S-EPMC11436303 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature