Chemical Interactions at the Interface of Au on Bi₂Se₃ Topological Insulator.

ABSTRACT: This study explores the intricate chemical processes at the interface between the topological insulator Bi₂Se₃ and deposited Au. The study mainly focused on room-temperature interactions that can cause the aging of, e.g., gold contacts on electronic devices based on the topological insulators (TIs) or spintronic devices. Our investigation uncovers a complex mechanism involving redox reactions, diffusion, and structural changes akin to the vapor-liquid-solid process. We observe the precipitation of metallic bismuth on the top of the Au layer and also a similar process, albeit at a slower rate, involving Se⁰. The resulting non-stoichiometry in the interfacial layers is compensated with the formation of an intermetallic compound low on Bi. As the temperature i

SUBMITTER: Valant M 

PROVIDER: S-EPMC11440592 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature