Tracking Charge Carrier Paths in Freestanding GaN/AlN Nanowires on Si(111).

ABSTRACT: Functional and abundant substrate materials are relevant for applying all sophisticated semiconductor-based device components such as nanowire arrays. In the case of GaN nanowires grown by metalorganic vapor phase epitaxy, Si(111) substrates are widely used, together with an AlN interlayer to suppress the well-known Ga-based melt-back-etching. However, the AlN interlayer can degrade the interfacial conductivity of the Si(111) substrate. To reveal the possible impact of this interlayer on the overall electrical performance, an advanced analysis of the electrical behavior with suitable spatial resolution is essential. For the electrical investigation of the nanowire-to-substrate junction, we used a four-point probe measurement setup with sufficiently high spatial resolution. The charge separ

SUBMITTER: Koch J 

PROVIDER: S-EPMC11450776 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature