Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials.

ABSTRACT: Laser-pulsed atom probe tomography (LAPT) is a materials characterization technique that has been widely applied in the study and characterization of III-nitride semiconductors. To date, most of these studies have used light sources ranging from the visible to the near-ultraviolet region of the spectrum. In this manuscript, we demonstrate that a recently developed extreme ultraviolet (EUV) radiation pulsed atom probe tomograph can trigger controlled field ion evaporation from III-nitride samples. Experiments indicate that EUV radiation can reliably trigger field ion evaporation from undoped and Mg-doped p-GaN, as well as from Al _x Ga_1-x N and In _x Ga_1-x N alloys using extremely low EUV fluence pulses. While measurement

SUBMITTER: Miaja-Avila L 

PROVIDER: S-EPMC11459892 | biostudies-literature | 2021

REPOSITORIES: biostudies-literature