A hBN/Ga₂O₃ pn junction diode.

ABSTRACT: The development of next-generation materials such as hBN and Ga₂O₃ remains a topic of intense focus owing to their suitability for efficient deep ultraviolet (DUV) emission and power electronic applications. In this study, we combine p-type hBN and n-type Ga₂O₃, forming a pseudo-vertical pn hBN/Ga₂O₃ heterojunction device. Rectification ratios > 10⁵ (300 K) and [Formula: see text]400 (475 K) are observed and are amongst the highest values reported to date for ultra-thin hBN-based pn junctions. The measured current under forward bias is ~2 mA, which we attribute to the shallow Mg acceptor level (60 meV), and 0.2 µA at -10 V. Critically, device performance remains stable and highly repeatable after a multitude of te

SUBMITTER: Marye SA 

PROVIDER: S-EPMC11461727 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature