The role of SiO₂ buffer layer in the molecular beam epitaxy growth of CsPbBr₃ perovskite on Si(111).

ABSTRACT: Here we present the growth of molecular beam epitaxy (MBE) CsPbBr₃ perovskite films in the orthorhombic crystal structure, with unique structural and morphological properties. CsPbBr₃ MBE perovskite films, with thickness ranging from a few nm to 300 nm, were grown in ultra-high vacuum on a Si(111)7 × 7 reconstructed surface, and after the formation of about 2 nm of SiO₂, obtained exposing the clean reconstructed Si surface to molecular oxygen that serves to decouple the film from substrate. X-ray diffraction, and electron microscopies, such as scanning electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements showed remarkable structural, as well as morphological features, indicating extremely high crystall

SUBMITTER: De Padova P 

PROVIDER: S-EPMC11464526 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature