Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers.

ABSTRACT: Owing to high pixel density and brightness, gallium nitride (GaN) based micro-light-emitting diodes (Micro-LEDs) are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display. However, Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency, resulting in reduced luminous efficiency and severe brightness non-uniformity. Here, we reported high-brightness green Micro-displays with a 5 μm pixel utilizing high-quality GaN-on-Si epilayers. Four-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate, which possesses a low dislocation density of 5.25 × 10⁸ cm^-2, small wafer

SUBMITTER: Wu H 

PROVIDER: S-EPMC11464674 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature