Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature.

ABSTRACT: Current silicon-based CMOS devices face physical limitations in downscaling size and power loss, restricting their capability to meet the demands for data storage and information processing of emerging technologies. One possible alternative is to encode the information in a non-volatile magnetic state and manipulate this spin state electronically, as in spintronics. However, current spintronic devices rely on the current-driven control of magnetization, which involves Joule heating and power dissipation. This limitation has motivated intense research into the voltage-driven manipulation of spin signals to achieve energy-efficient device operation. Here, we show non-volatile control of spin-charge conversion at room temperature in graphene-based heterostructures through Fermi level tuning.

SUBMITTER: Choi J 

PROVIDER: S-EPMC11464766 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature