Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication.

ABSTRACT: Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom-engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulators and universal solid-state quantum computers. This work reports precise and repeatable, substitutional incorporation of single arsenic atoms into a silicon lattice. A combination of scanning tunneling microscopy hydrogen resist lithography and a detailed statistical exploration of the chemistry of arsine on the hydrogen-terminated silicon (001) surface are employed to show that single arsenic do

SUBMITTER: Stock TJZ 

PROVIDER: S-EPMC11475292 | biostudies-literature | 2024 Jun

REPOSITORIES: biostudies-literature