A Novel Ferroelectric Rashba Semiconductor.

ABSTRACT: Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials are established to belong to this class of multifunctional materials. Here, Pb_{1- x}Ge_xTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion are demonstrated by temperature dependent X

SUBMITTER: Krizman G 

PROVIDER: S-EPMC11475528 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature