Composition Dependent Electrical Transport in Si_1-x Ge_x Nanosheets with Monolithic Single-Elementary Al Contacts.

ABSTRACT: Si_1-x Ge_x is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-Si_1-x Ge_x junctions that are vital for diverse emerging "More than Moore" and quantum computing paradigms. In this respect, the systematic structural and electronic properties of Al-Si_1-x Ge_x heterostructures, obtained from a thermally induced exchange between ultra-thin Si_1-x Ge_x nanosheets and Al layers are reported. Remarkably, no intermetallic phases are found after the exchange process. Instead, abrupt, flat, and void-free junctions of

SUBMITTER: Wind L 

PROVIDER: S-EPMC11475588 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature