Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon.

ABSTRACT: Nearly four decades have passed since IBM scientists pioneered atomic force microscopy (AFM) by merging the principles of a scanning tunneling microscope with the features of a stylus profilometer. Today, electrical AFM modes are an indispensable asset within the semiconductor and nanotechnology industries, enabling the characterization and manipulation of electrical properties at the nanoscale. However, electrical AFM measurements suffer from reproducibility issues caused, for example, by surface contaminations, Joule heating, and hard-to-minimize tip drift and tilt. Using as experimental system nanoscale Schottky diodes assembled on oxide-free silicon crystals of precisely defined surface chemistry, it is revealed that voltage-dependent adhesion forces lead to significant rotation of the

SUBMITTER: Hurtado C 

PROVIDER: S-EPMC11481228 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature