Locally Phase-Engineered MoTe₂ for Near-Infrared Photodetectors.

ABSTRACT: Transition-metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic phase of TMDs have recently been discovered, allowing the creation of lateral heterostructures and the design of all-2D circuitry. Thus, far, the potential benefits of phase-engineered TMD devices for optoelectronic applications are still largely unexplored. The dominant mechanisms involved in photocurrent generation in these systems remain unclear, hindering further development of new all-2D optoelectronic devices. Here, we fabricate locally phase-engineered MoTe₂ optoelectronic devices, creating a metal (1T') semiconductor (2H) lateral junction a

SUBMITTER: Hidding J 

PROVIDER: S-EPMC11487713 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature