High drain field impact ionization transistors as ideal switches.

ABSTRACT: Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec^-1 subthreshold swing. However, traditionally, impact ionization in silicon devices requires a high operation voltage due to limited electrical field near the device drain, contradicting the low energy operation purpose. Here, we report a vertical subthreshold swing device composed of a graphene/silicon heterojunction drain and a silicon channel. This structure creates a low voltage avalanche impact ionization phenomenon and leads to steep switching of the silicon-based device. Experimental measurements reveal a small average subthreshold swing of 16 µV dec^-1 over 6 decades of drain current and nearly hysteresis-free, and the operating voltage at which a vertical subthreshold swing oc

SUBMITTER: Yuan B 

PROVIDER: S-EPMC11490558 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature