Growth Behavior of Ni on Hydrogen-Etched WS₂ Surface.

ABSTRACT: Transition metal dichalcogenides (TMDs) are 2D materials in which the layers are stacked together by van der Waals forces. Although TMDs are expected to be promising for electronic applications, forming a uniform electrode on them is challenging because of the low adhesion forces between metals and TMDs. This study focuses on improving the quality of metal electrodes by introducing atomic H to create surface defects, using Ni on WS₂ as an example. The detailed effects of H etching and subsequent Ni growth were investigated using scanning tunneling microscopy (STM) and synchrotron-based X-ray photoemission (XPS) techniques. Our studies reveal that introducing point defects of ∼3.05 × 10¹¹ cm^-2 on the WS₂ surface, results in a significant shift in

SUBMITTER: Liu HT 

PROVIDER: S-EPMC11492163 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature