The Role of Interface Band Alignment in Epitaxial SrTiO₃/GaAs Heterojunctions.

ABSTRACT: Correlated oxides are known to have remarkable properties, with a range of electronic, magnetic, optoelectronic, and photonic functionalities. A key ingredient in realizing these properties into practical technology is the effective and scalable integration of oxides with conventional semiconductors. Unlocking the full spectrum of functionality requires atomically abrupt oxide-semiconductor interfaces and intimate knowledge of their potential landscape and charge transport. In this study, we investigated the electrical properties of epitaxial SrTiO₃/GaAs heterostructures by examining the band alignment and transport behavior at the interface. We employ X-ray photoelectron spectroscopy (XPS) to measure the barriers for electrons and holes across the interface and, through them, e

SUBMITTER: Caspi S 

PROVIDER: S-EPMC11500420 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature