Artificial optoelectronic synapse based on CdSe nanobelt photosensitized MoS₂ transistor with long retention time for neuromorphic application.

ABSTRACT: Optoelectronic synaptic devices have been regarded as the key component in constructing neuromorphic computing systems. However, the optoelectronic synapses based on conventional 2D transistor are still suffering low photosensitivity and volatile retention behavior, which can affect the recognition accuracy and long-term memory. Here, a novel optoelectronic synaptic device based on surface-state-rich CdSe nanobelt photosensitized 2D MoS₂ transistor is demonstrated. Benefiting from the excellent light absorption of CdSe and effective charge trapping at the hetero-interface, the device exhibits not only high photosensitivity but also long retention time (>1,500 s). In addition, typical synaptic functions including the excitatory postsynaptic current, paired-pulse facilitation, the

SUBMITTER: Song X 

PROVIDER: S-EPMC11501069 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature