Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties.

ABSTRACT: The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber networks and on-chip silicon photonic processors. InAs/InP quantum dots (QDs) are among the leading candidates for this purpose, due to their high emission efficiency in the required spectral range. However, fabricating versatile InAs/InP QD-based quantum emitters is challenging, especially as these QDs typically have asymmetric profiles in the growth plane, resulting in a substantial bright-exciton fine structure splitting (FSS). This hinders the generation of entangled photon pairs and thus, compromises the versatility of InAs/InP QDs. We overcome this

SUBMITTER: Holewa P 

PROVIDER: S-EPMC11501369 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature