Electrically tunable metasurface by using InAs in a metal-insulator-metal configuration.

ABSTRACT: The ability of modulating optical properties at a lateral subwavelength scale is of crucial importance due to its potential applications for wide-angle holographic displays, optical communications, and interferometric sensors. Here, we present an electrically tunable metasurface whose optical properties can be element-wise controlled at the lateral subwavelength scale in the mid-infrared wavelength regime. Our proposed device facilitates an n-doped InAs layer as a dynamic-tunable layer, and the charge carrier concentration inside the InAs layer is tailored by external gate biases. This InAs active layer is sandwiched between top aluminum strip antennas and a bottom gold substrate, forming the metal-insulator-metal configuration. The change of the charge carrier concentration gives r

SUBMITTER: Park J 

PROVIDER: S-EPMC11501525 | biostudies-literature | 2022 Feb

REPOSITORIES: biostudies-literature