A high-gain cladded waveguide amplifier on erbium doped thin-film lithium niobate fabricated using photolithography assisted chemo-mechanical etching.

ABSTRACT: Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta₂O₅) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved

SUBMITTER: Liang Y 

PROVIDER: S-EPMC11501891 | biostudies-literature | 2022 Feb

REPOSITORIES: biostudies-literature